Investigation on the intensity noise characteristics of the semiconductor ring laser

被引：2

作者：

Kang Ze-Xin ^{[1
,2
]}

Cai Xin-Lun ^{[2
]}

Wen Xiao-Dong ^{[1
]}

Liu Chao ^{[1
]}

Jian Shui-Sheng ^{[1
]}

Yu Si-Yuan ^{[2
]}

机构：

[1] Beijing Jiaotong Univ, Inst Lightwave Technol, Key Lab All Opt Network & Adv Telecommun Network, EMC, Beijing 100044, Peoples R China

[2] Univ Bristol, Dept Elect & Elect Engn, Bristol BS8 1TR, Avon, England

来源：

CHINESE PHYSICS B | 2014年 / 23卷 / 02期

关键词：

semiconductor ring laser; relative intensity noise; low frequency noise enhancement; INP MICRORING LASERS; MODEL; GAIN;

D O I：

10.1088/1674-1056/23/2/024203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the frequency-domain multimode theoretical model, detailed investigations on the noise characteristic of the semiconductor ring laser (SRL) are first performed in this paper. The comprehensive nonlinear terms related to the third order nonlinear susceptibility chi(3) are included in this model; the Langevin noise sources for electric field and carrier density fluctuations are also taken into account. As the injection current increases, the SRL may present several operation regimes. Remarkable and unusual low frequency noise enhancement in the form of a broad low frequency tail extending all the way to the relaxation oscillation peak is observed in any of the operation regimes of SRLs. The influences of the backscattering coefficient on the relative intensity noise (RIN) spectrum in typical operation regimes are investigated in detail.

引用

页数：8

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