A novel high performance resonant gate drive circuit with low circulating current

被引：0

作者：

Eberle, W ^{[1
]}

Sen, PC ^{[1
]}

Liu, YF ^{[1
]}

机构：

[1] Queens Univ, Queens Power Grp, Kingston, ON K7L 3N6, Canada

来源：

APEC 2006: TWENTY-FIRST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new resonant gate drive circuit is proposed for power MOSFETs. The proposed circuit can recover a portion of the CV2 gate energy and it achieves quick turn on and turn off transition times to reduce switching loss and conduction loss in power MOSFETS. The circuit consists of four control switches and a small resonant inductance. The current through the resonant inductance is discontinuous in order to minimize circulating current conduction loss present in other methods. An analysis, design procedure, loss analysis, simulation results and experimental results are presented for the proposed circuit.

引用

页码：324 / 330

页数：7

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