Epitaxy and characterization of GaInP/AlInP light-emitting diodes on As-doped Ge/Si substrates

被引：3
|
作者：
Wang, Cong [1 ]
Wang, Bing [2 ]
Lee, Kwang Hong [2 ]
Tan, Chuan Seng [1 ,2 ]
Yoon, Soon Fatt [1 ,2 ]
Michel, Jurgen [2 ,3 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore
[2] Singapore MIT Alliance Res & Technol SMART, LEES, 1 CREATE Way,10-01 CREATE Tower, Singapore 138602, Singapore
[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
来源：
OPTICS EXPRESS | 2016年 / 24卷 / 20期
基金：
新加坡国家研究基金会;
关键词：
SI; GE;
D O I：
10.1364/OE.24.023129
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We investigate the impact of threading dislocation density (TDD) and thermal conductivity of substrates on the performance of GaInP/AlInP light-emitting diodes (LEDs) for the integration of III-V optoelectronics on Si. We utilized an arsenic (As) doped Ge/Si substrate that showed a reduced TDD compared to undoped Ge/Si. Compared to LEDs on undoped Ge/Si, the leakage current density for LEDs on As-doped Ge/Si substrate is reduced by four orders of magnitude and the light output is increased six-fold. An increased junction temperature causes light output saturation for LEDs on bulk Ge at high injection current densities. The light output of LEDs on As-doped Ge/Si shows good linearity with injection current density and its junction temperature is similar to 25 +/- 5 degrees C lower than that of LEDs on bulk Ge at high injection current densities due to better thermal conductivity of the Ge/Si substrate. (C) 2016 Optical Society of America
引用
收藏
页码：23129 / 23135
页数：7
相关论文
共 50 条
  • [1] ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers
    Ye, Z. Z.
    Lu, J. G.
    Zhang, Y. Z.
    Zeng, Y. J.
    Chen, L. L.
    Zhuge, F.
    Yuan, G. D.
    He, H. P.
    Zhu, L. P.
    Huang, J. Y.
    Zhao, B. H.
    APPLIED PHYSICS LETTERS, 2007, 91 (11)
  • [2] Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates
    Wang, Bing
    Wang, Cong
    Lee, Kwang Hong
    Bao, Shuyu
    Lee, Kenneth Eng Kian
    Tan, Chuan Seng
    Yoon, Soon Fatt
    Fitzgerald, Eugene A.
    Michel, Jurgen
    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX, 2016, 9768
  • [3] AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates
    Modak, P
    D'Hondt, M
    Delbeke, D
    Moerman, I
    Van Daele, P
    Baets, R
    Demeester, P
    Mijlemans, P
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (08) : 957 - 959
  • [4] Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals
    Shmagin, V. B.
    Yablonskiy, A. N.
    Stepikhova, M., V
    Yurasov, D., V
    Mikhaylov, A. N.
    Tetelbaum, D., I
    Rodyakina, E. E.
    Morozova, E. E.
    Shengurov, D., V
    Kraev, S. A.
    Yunin, P. A.
    Belov, A., I
    Novikov, A., V
    NANOTECHNOLOGY, 2024, 35 (16)
  • [5] Blue light-emitting diodes on GaN substrates, growth and characterization
    Pelzmann, A
    Kirchner, C
    Mayer, M
    Schwegler, V
    Schauler, M
    Kamp, M
    Ebeling, KJ
    Grzegory, I
    Leszczynski, M
    Nowak, G
    Porowski, S
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 167 - 171
  • [6] Epitaxy and Wafer Bonding of AlGaInP Multiple-Quantum Wells and Light-Emitting Diodes on 8" Si Substrates
    Wang, Bing
    Lee, Kwang Hong
    Bao, Shuyu
    Wang, Cong
    Tan, Chuan Seng
    Yoon, Soon Fatt
    Fitzgerald, Eugene A.
    Michel, Jurgen
    2016 IEEE PHOTONICS CONFERENCE (IPC), 2016, : 791 - 792
  • [7] InGaN/GaN light-emitting diodes on Si(110) substrates grown by metal-organic vapour phase epitaxy
    Reiher, F.
    Dadgar, A.
    Blaesing, J.
    Wieneke, M.
    Mueller, M.
    Franke, A.
    Reissmann, L.
    Christen, J.
    Krost, A.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (05)
  • [8] Design of gallium nitride resonant cavity light-emitting diodes on Si substrates
    Mastro, Michael A.
    Caldwell, Joshita D.
    Holm, Ron T.
    Henry, Rich L.
    Eddy, Charles R., Jr.
    ADVANCED MATERIALS, 2008, 20 (01) : 115 - +
  • [9] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES
    FLETCHER, RM
    WAGNER, DK
    BALLANTYNE, JM
    APPLIED PHYSICS LETTERS, 1984, 44 (10) : 967 - 969
  • [10] Light-emitting Diodes on Si (110) Substrate
    Chen, Chih-Yen
    Chen, Horng-Shyang
    Liu, Zhan Hui
    Lin, Chun-Han
    Su, Chia-Ying
    Chang, Ta-Wei
    Shih, Pei-Ying
    Chen, Chung-Hui
    Chou, Wang-Hsien
    Hsieh, Chieh
    Chang, Wen-Ming
    Kiang, Yean-Woei
    Yang, C. C.
    2013 10TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (CHINASSL), 2013, : 250 - 251
12345