Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si

被引：15
|
作者：
Boieriu, P [1 ]
Grein, CH
Velicu, S
Garland, J
Fulk, C
Sivananthan, S
Stoltz, A
Bubulac, L
Dinan, JH
机构：
[1] EPIR Technol Inc, Bolingbrook, IL 60440 USA
[2] USA, RDECOM, CERDEC, NVESD, Ft Belvoir, VA 22060 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 06期
关键词：
D O I：
10.1063/1.2172295
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present the results of using an electron cyclotron resonance (ECR) plasma to incorporate hydrogen into long wavelength infrared HgCdTe layers grown by molecular beam epitaxy. Both as-grown and annealed layers doped in situ with indium were hydrogenated. Secondary ion mass spectroscopy confirmed the incorporation of hydrogen. Hall and photoconductive lifetime measurements were used to assess the effects of the hydrogenation. Increases in the electron mobilities and minority carrier lifetimes were observed for almost all ECR conditions. (c) 2006 American Institute of Physics.
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页数：3
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