Processing of amorphous Si by pulsed laser irradiation at different wavelengths

被引：0

作者：

Butikova, J. ^{[1
]}

Marcins, G. ^{[1
]}

Polyakov, B. ^{[1
]}

Muhins, A. ^{[1
]}

Voitkans, A. ^{[1
]}

Tale, I. ^{[1
]}

机构：

[1] Inst Solid State Phys, LV-1063 Riga, Latvia

来源：

INTERNATIONAL CONFERENCE ON FUNCTIONAL MATERIALS AND NANOTECHNOLOGIES (FM&NT2012) | 2012年 / 38卷

关键词：

SILICON; CRYSTALLIZATION;

D O I：

10.1088/1757-899X/38/1/012009

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous Si thin films deposited on thermally oxidized Si wafers have been processed by the 2nd and 3rd harmonics of Nd:YAG laser. Surface modification of amorphous silicon layers have been investigated by scanning electron microscopy before and after chemical etching of processed silicon films. The super-lateral crystal growth regime was achieved with laser fluence of 280 mJ/cm(2) for the 2nd harmonics and 155 mJ/cm(2) for the 3rd harmonics. The grain size in polycrystalline Si samples prepared by successive crystallization in the lateral growth regime is about 0.5 - 1 mu m.

引用

页数：6

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