Self-catalyzed growth of GaAs nanowires on silicon by HYPE

被引：0

作者：

Dong, Zhenning ^{[1
,2
]}

Andre, Yamina ^{[1
,2
,3
]}

Dubrovskii, Vladimir ^{[4
,5
]}

Bougerol, Catherine ^{[6
,7
]}

Monier, Guillaume ^{[1
,2
]}

Ramdani, Reda ^{[1
,2
]}

Trassoudaine, Agnes ^{[1
,2
,8
]}

Leroux, Christine ^{[9
,10
]}

Castelluci, Dominique ^{[1
,2
]}

Gil, Evelyne ^{[1
,2
,3
]}

机构：

[1] Univ Clermont Ferrand, Clermont Univ, Inst Pascal, F-63000 Clermont Ferrand, France

[2] CNRS, UMR 6602, F-63178 Aubiere, France

[3] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia

[4] St Petersburg Acad Univ, Khlopina 8-3, St Petersburg 194021, Russia

[5] Russian Acad Sci, Ioffe Phys Tech Inst, Polytekhn Heskaya 26, St Petersburg 194021, Russia

[6] Univ Grenoble Alpes, F-38000 Grenoble, France

[7] CNRS, Inst Neel, F-38042 Grenoble, France

[8] Univ Auvergne, Inst Univ Technol, Dep Mesures Phys, F-63178 Aubiere, France

[9] Univ Sud Toulon Var, IM2NP, Bat R,BP 20132, F-83957 La Garde, France

[10] CNRS, UMR 6242, F-83957 La Garde, France

来源：

2016 INTERNATIONAL CONFERENCE LASER OPTICS (LO) | 2016年

关键词：

GaAs; IIVPE; Nanowire; Silicon; Self-catalyzed;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the first self -catalyzed growth of GaAs nanowires on patterned and non -patterned silicon (111) wafers by hydride vapor phase epitaxy (HVPE) with a record elongation rate of 30 !lm/h. The crystalline structure was analyzed using high resolution transmission electron microscopy (HRTEM). Self -catalyzed growth proceeds under gallium rich conditions at low -temperature (600 C). Nanowires exhibit cylindrical rod -like shape morphology with a mean diameter of 50 nm and are randomly distributed.

引用

页数：1

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