A new approach to prepare highly loaded palladium

被引:10
|
作者
Oliveira, MCF [1 ]
机构
[1] Univ Tras Os Montes & Alto Douro, Dept Quim, Ctr Quim & Bioquim, Fac Ciencias, P-1749016 Lisbon, Portugal
关键词
palladium hydride; hyperstoichiometry; hypophosphite; Pd-black; Pd film; AFM; OCP;
D O I
10.1016/j.elecom.2006.02.011
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this work, a simple procedure to prepare black-Pd films with a high H/Pd loading ratio is reported. The proposed methodology relies on a nonconventional H-source, the hypophosphite ion. Anomalous high loading ratios, H/Pd > 1, were found, however, it was concluded that the hyperstoichiometric hydrogen was independent of the H-source but was intrinsic to the surface properties of the prepared Pd-black film. Hydrogen loading was also determined from GIXRD analysis and a PdH0.79 stoichiometry was found. The atypical H/Pd loading ratio was attributed to H-2 trapping by surface voids. The Pd-black film, prepared by a spontaneous deposition process, was characterized by cyclic voltammetry and AFM. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:647 / 652
页数:6
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