Dependence of sidegating effect in InAlAs/InGaAs HEMTs upon impact ionization

被引：0
|
作者：
Berthelemot, C [1 ]
Vigier, P [1 ]
Dumas, JM [1 ]
Clei, A [1 ]
Palla, R [1 ]
Harmand, JC [1 ]
机构：
[1] UNIV LIMOGES,ENSIL,F-87000 LIMOGES,FRANCE
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：674 / 677
页数：4
相关论文
共 50 条
  • [1] Indium content dependence of electron velocity and impact ionization in InAlAs/InGaAs metamorphic HEMTs
    Ono, H
    Taniguchi, S
    Suzuki, TK
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 2259 - 2263
  • [2] Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications
    Gomes, Umesh P.
    Chen, Yiqiao
    Kabi, Sanjib
    Chow, Peter
    Biswas, Dhrubes
    [J]. CURRENT APPLIED PHYSICS, 2013, 13 (03) : 487 - 492
  • [3] Impact ionization in InAlAs/InGaAs/InAlAs HEMT's
    Webster, RT
    Wu, SL
    Anwar, AFM
    [J]. IEEE ELECTRON DEVICE LETTERS, 2000, 21 (05) : 193 - 195
  • [4] Dynamics of the kink effect in InAlAs/InGaAs HEMTs
    Ernst, AN
    Somerville, MH
    delAlamo, JA
    [J]. 1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 353 - 356
  • [5] IMPACT IONIZATION IN INALAS/INGAAS HFETS
    MOOLJI, AA
    BAHL, SR
    DELALAMO, JA
    [J]. IEEE ELECTRON DEVICE LETTERS, 1994, 15 (08) : 313 - 315
  • [6] Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs
    Suemitsu, T
    Enoki, T
    Tomizawa, M
    Shigekawa, N
    Ishii, Y
    [J]. 1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 365 - 368
  • [7] IMPACT IONIZATION RATES IN AN INGAAS/INALAS SUPERLATTICE
    KAGAWA, T
    KAWAMURA, Y
    ASAI, H
    NAGANUMA, M
    MIKAMI, O
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (10) : 993 - 995
  • [8] Temperature dependence of breakdown voltage in InAlAs/InGaAs HEMTs: Theory and experiments
    Putnam, CS
    Somerville, MH
    delAlamo, JA
    Chao, PC
    Duh, KG
    [J]. 1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 197 - 200
  • [9] ELECTROLUMINESCENCE FROM INGAAS/INALAS HEMTS
    WOODHEAD, J
    REDDY, M
    DAVID, JPR
    [J]. ELECTRONICS LETTERS, 1994, 30 (14) : 1181 - 1183
  • [10] INALAS/INGAAS/INP JUNCTION HEMTS
    BOOS, JB
    BINARI, SC
    KRUPPA, W
    HIER, H
    [J]. ELECTRONICS LETTERS, 1990, 26 (15) : 1172 - 1173
12345