Physical vapor deposition synthesis of Cu3BiS3 for application in thin film photovoltaics

被引：0
|
作者：
Gerein, NJ [1 ]
Haber, JA [1 ]
机构：
[1] Univ Alberta, Dept Chem, Edmonton, AB T6G 2G2, Canada
来源：
Thin-Film Compound Semiconductor Photovoltaics | 2005年 / 865卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The development of novel solar absorbers and device configurations that incorporate only materials which are cost effective, abundant, and non-toxic may be required for widespread deployment of photovoltaics. CU3BiS3 (E-g=1.2 eV) has been previously reported to be a suitable solar absorber for use in thin film photovoltaic devices. We have developed a physical vapor deposition synthesis for CU3BiS3, and will employ conibinatorial methods to identify novel device configurations in an effort to produce a device exhibiting sufficient efficiency to capture the interest of the photovoltaics community.
引用
收藏
页码：119 / 124
页数：6
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