Ta segregation at the Ti(001) surface studied by time-of-flight impact-collision ion scattering spectroscopy

被引：1
|
作者：
Hwang, Y
Souda, R
Hishita, S
Otani, S
机构：
[1] Seoul Natl Univ Technol, Dept Mat Sci & Engn, Nowon Gu, Seoul 139743, South Korea
[2] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 305, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 184卷 / 04期
关键词：
surface segregation; impact-collision ion scattering spectroscopy; titanium carbide;
D O I：
10.1016/S0168-583X(01)00792-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Tantalum was ion implanted onto the TiC(0 0 1) surface at the energy of 2 MeV with the total doping amount of 1 x 10(17) atoms/cm(2). After thermal treatment at 1600 degreesC for 300 s. the atomic structure of Ta segregation on the TiC(0 0 1) surface was investigated by using time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS). It was found that the segregated Ta atoms were located on the Ti-site. Ta atoms segregated not only to the outermost layer but had a gradual concentration decrease inwards from the surface. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：555 / 558
页数：4
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