The CuInSe2-Culn3Se5 defect compound interface: Electronic structure and band alignment

被引：23

作者：

Hofmann, A. ^{[1
]}

Pettenkofer, C. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin, Inst Silicon Photovolta, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 06期

关键词：

CHALCOPYRITE SEMICONDUCTORS; CU DEPLETION; SOLAR-CELLS; CUINSE2; PHOTOEMISSION; SURFACE; HETEROJUNCTION; LAYERS; FILMS;

D O I：

10.1063/1.4739790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface formation between stoichiometric chalcopyrite CuInSe2 and the copper-deficient defect phase CuIn3Se5 is investigated by in situ photoelectron spectroscopy. The use of epitaxial samples allows for the preparation of highly defined surfaces and accurate analysis of the electronic structure. Valence band structures measured with synchrotron-based photoelectron spectroscopy are in agreement with density functional theory. We observe a lowering of the top valence band of CuIn3Se5 of 0.29 eV with respect to CuInSe2. The increased optical gap for copper-deficient material leads to aligned conduction bands. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739790]

引用

页数：4

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