Gate-Length-Dependent Strain Effect in n- and p-Channel FinFETs

被引：9

作者：

Song, Jooyoung ^{[1
]}

Yu, Bo ^{[1
]}

Xiong, Weize ^{[2
]}

Taur, Yuan ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Texas Instruments Inc, Adv CMOS, Dallas, TX 75243 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 03期

关键词：

FinFET; gate-length-dependent strain effect; mobility; tensile gate;

D O I：

10.1109/TED.2008.2011840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief reports the experimentally measured strain effect on electron and hole transport in < 110 >-oriented FinFETs. To separate out the series-resistance component, the low drain-bias resistance is differentiated with respect to the gate voltage. It is found that the hole mobility is enhanced while the electron mobility reduced toward short-channel devices. This effect is attributed to the gate-length-dependent strain in FinFET device structures.

引用

页码：533 / 536

页数：4

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