Advanced chemical mechanical planarization (CMP) process for copper interconnects

被引：0
|
作者：
Hara, T [1 ]
机构：
[1] Hosei Univ, Koganei, Tokyo 1840002, Japan
来源：
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Chemical mechanical planarization (CMP) of copper dual Damascene is described. Dishing of copper layer can be controlled by the CMP employing non-abrassive MnO2 slurry. Removal rate ratio of the Cu/barrier layer can be reduced from 2.8 to unity with doping of antioxide additive in the slurry. Dishing still appears at the rate of 2.8 and dishing free CMP can be attained at unit. Scratches are formed in this CMP.
引用
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页码：386 / 390
页数：5
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