Effects of nickel incorporation on the growth kinetics and electronic characteristics of metal-induced laterally crystallized polycrystalline silicon

被引：0

作者：

Wong, Man ^{[1
]}

Zhang, Dongli ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005 | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

During metal-induced lateral crystallization (MILC) of amorphous silicon, nickel is detected in amorphous silicon near the MILC front. This is found to exert subtle but observable effects on the crystallization kinetics. After MILC, a small amount of nickel remains trapped in the resulting polycrystalline silicon. Transistor leakage current is found to be reduced if such residual nickel is gettered.

引用

页码：45 / 48

页数：4

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