Application of attenuated phase-shifting masks to sub-130nm lithography

被引：1

作者：

Koo, CK ^{[1
]}

Choo, LC ^{[1
]}

Lin, QY ^{[1
]}

Tan, SS ^{[1
]}

Lee, HJ ^{[1
]}

Tam, SC ^{[1
]}

See, A ^{[1
]}

机构：

[1] Nanyang Technol Univ, Dept Elect & Elect Engn, Singapore 639798, Singapore

来源：

OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2 | 2001年 / 4346卷

关键词：

attenuated phase-shifting mask; 248nm lithography; polysilicon gate patterning; simulation; off-axis illumination; OPC;

D O I：

10.1117/12.435778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the performance of 6% and 18% attenuated phase-shifting masks (PSM) are investigated to assess their capabilities of printing 0.12mum and 0.10mum polysilicon gates, using a 248nm scanner with a high NA of 0.68. The effect of off-axis illumination on process enhancement is also investigated. Simulations were done using PROLITH/3D Version 6.1.2. Experimentation was carried out using test masks with various line pitches. The effect of optical proximity correction (OPC) to enhance the overlapping process windows for 0.12mum and 0.10mum was also studied.

引用

页码：787 / 797

页数：11

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