Electrodeposition and Properties of CuInS2 Thin Films

被引：2

作者：

Zhou Haifang ^{[1
]}

Chen Xiaohu ^{[2
]}

机构：

[1] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China

[2] Coll Fujian Hlth, Fuzhou 350101, Peoples R China

来源：

MATERIAL DESIGN, PROCESSING AND APPLICATIONS, PARTS 1-4 | 2013年 / 690-693卷

基金：

中国国家自然科学基金;

关键词：

Electrodeposition; Thin films; Optical properties;

D O I：

10.4028/www.scientific.net/AMR.690-693.1659

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550 degrees C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20x10(17) cm(-3), respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 inA/cm(2) under 255 lx illumination, the sample shows the photo-enhancement effect.

引用

页码：1659 / +

页数：2

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