Current-voltage and capacitance-voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact

被引：64
|
作者：
Yakuphanoglu, F. [1 ]
Kandaz, M. [2 ]
Senkal, B. F. [3 ]
机构：
[1] Firat Univ, Dept Phys, TR-23119 Elazig, Turkey
[2] Sakarya Univ, Dept Chem, TR-54140 Esentepe, Sakarya, Turkey
[3] Istanbul Tech Univ, Dept Chem, TR-34469 Istanbul, Turkey
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 23期
关键词：
Phthalocyanine; Organic semiconductor; Metal-organic-inorganic; semiconductor contacts; Interface-state density;
D O I：
10.1016/j.tsf.2008.06.076
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical characteristics of the Al/p-type silicon/2,9,16,23-tetrakis-{6-(-thiophene-2-carboxylate)-hexylthio} phthalocyaninato cobalt(II) organic semiconductor contact have been investigated by current-voltage and capacitance-voltage measurements. The ideality factor (1.33), barrier height (0.90 eV) and series resistance (314.5 k Omega) of the Al/p-Si/CoPc contact were obtained from current-voltage characteristics. The barrier height obtained for the Al/p-Si/CoPc diode is significantly higher than that of obtained for the conventional Al/p-Si Schottky diode. The CoPc organic layer modifies the effective barrier height of Al/p-Si Schottky diode as the organic film forms a physical barrier between Al metal and the p-Si. The interface-state density of the diode was determined and interface-state density was found to vary from 1.23x 10(14) eV(-1) cm(-2) to 0.69 x 10(14) eV(-1) cm(-2). It is evaluated that the CoPc organic layer modifies electrical parameters and interface properties of Al/p-Si junction. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：8793 / 8796
页数：4
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