Temperature dependence of electrical properties of N2O/O2/N2O-grown oxides on strained SiGe

Temperature dependence of electrical properties of split-N2O grown oxides on strained SiGe layers by rapid thermal oxidation is reported. The reliability and thermal stability of ultrathin oxides have been examined by high frequency capacitance-voltage and current density versus electric field measurements. It is observed that at a low (<6 MV/cm) electric field, the shallow trap-assisted conduction mechanism is responsible for the leakage current below 100 degrees C and the Frenkel-Poole conduction dominates above 100 degrees C. At a high (>11 MV/cm) electric field, however, the leakage current is mainly governed by the Fowler-Nordheim tunneling. Charge-to-breakdown measurements at a constant current stressing show a higher reliability for the split-N2O grown oxides. (C) 2002 American Institute of Physics.