Highly efficient edge terminations for diamond Schottky diodes

被引：0

作者：

Brezeanu, M. ^{[1
]}

Rashid, S. J. ^{[1
]}

Butler, T. ^{[1
]}

Rupesinghe, N. L. ^{[1
]}

Udrea, F. ^{[1
]}

Garraway, A. ^{[1
]}

Coubeck, L. ^{[1
]}

Taylor, P. ^{[1
]}

Amaratunga, G. A. J. ^{[1
]}

Twitchen, D. J. ^{[1
]}

Tajani, A. ^{[1
]}

Dixon, M. P. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE | 2005年 / 1-2卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two termination structures suitable for diamond Schottky diodes are presented in this paper. A thorough comparison between the two structures, concerning both electrical and geometrical aspects, is included. The study is based on theoretical models and extensive numerical results. High termination efficiencies, up to 93%, are reported.

引用

页码：319 / 322

页数：4

共 50 条

[21] Small signal analysis of MPCVD diamond Schottky diodes
Mendes, J. C.
Gomes, H. L.
Trippe, S. C.
Mukherjee, D.
Pereira, L.
DIAMOND AND RELATED MATERIALS, 2019, 93 : 131 - 138
[22] Electric field breakdown of lateral Schottky diodes of diamond
Teraji, Tokuyuki
Koizumi, Satoshi
Koide, Yasuo
Ito, Toshimichi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (8-11): : L196 - L198
[23] Electrical AC behaviour of MPCVD diamond Schottky diodes
Pereira, L
Rodrigues, A
Gomes, H
Pereira, E
DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 615 - 619
[24] Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations
Chang, SC
Wang, SJ
Uang, KM
Liou, BW
SOLID-STATE ELECTRONICS, 2005, 49 (03) : 437 - 444
[25] EDGE CAPACITANCE EFFECTS ON SCHOTTKY BARRIER MICROWAVE DIODES
DAY, HM
GLEASON, KR
REPORT OF NRL PROGRESS, 1969, (JUL): : 17 - &
[26] Design of edge termination for GaN power Schottky diodes
J. R. Laroche
F. Ren
K. W. Baik
S. J. Pearton
B. S. Shelton
B. Peres
Journal of Electronic Materials, 2005, 34 : 370 - 374
[27] INFLUENCE OF THE EDGE EFFECTS ON THE FLOW OF THE CURRENT IN SCHOTTKY DIODES
MAMEDOV, RK
NABIEV, MA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 206 - 208
[28] Design of edge termination for GaN power Schottky diodes
Laroche, JR
Ren, F
Baik, KW
Pearton, SJ
Shelton, BS
Peres, B
JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) : 370 - 374
[29] Development of highly efficient blue and green edge-emitting laser diodes
Kishimoto, Katsuhiro
Hirao, Tsuyoshi
Morizumi, Tomonori
Nagao, Yoji
Nakatsu, Yoshitaka
Yanamoto, Tomoya
Nagahama, Shin-ichi
GALLIUM NITRIDE MATERIALS AND DEVICES XIX, 2024, 12886
[30] Diamond Schottky barrier diodes with low specific on-resistance
Chen, YG
Ogura, M
Makino, T
Yamasaki, S
Okushi, H
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (12) : 1203 - 1206

← 1 2 3 4 5 →