Highly efficient edge terminations for diamond Schottky diodes

被引：0
|
作者：
Brezeanu, M. [1 ]
Rashid, S. J. [1 ]
Butler, T. [1 ]
Rupesinghe, N. L. [1 ]
Udrea, F. [1 ]
Garraway, A. [1 ]
Coubeck, L. [1 ]
Taylor, P. [1 ]
Amaratunga, G. A. J. [1 ]
Twitchen, D. J. [1 ]
Tajani, A. [1 ]
Dixon, M. P. [1 ]
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
来源：
CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE | 2005年 / 1-2卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two termination structures suitable for diamond Schottky diodes are presented in this paper. A thorough comparison between the two structures, concerning both electrical and geometrical aspects, is included. The study is based on theoretical models and extensive numerical results. High termination efficiencies, up to 93%, are reported.
引用
收藏
页码：319 / 322
页数：4
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