The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT)

被引:65
|
作者
Slouka, Christoph [1 ]
Kainz, Theresa [2 ]
Navickas, Edvinas [1 ]
Walch, Gregor [1 ]
Hutter, Herbert [1 ]
Reichmann, Klaus [2 ]
Fleig, Juergen [1 ]
机构
[1] Vienna Univ Technol, Inst Chem Technol & Analyt, Getreidemarkt 9-164EC, A-1060 Vienna, Austria
[2] Graz Univ Technol, Inst Chem & Technol Mat, Stremayrgasse 9, A-8010 Graz, Austria
基金
奥地利科学基金会;
关键词
defect chemistry; oxygen vacancies; doping; diffusion; lead zirconate titanate; DEFECT CHEMISTRY; ELECTRICAL-CONDUCTIVITY; RESISTANCE DEGRADATION; TRANSPORT-PROPERTIES; GRAIN-BOUNDARIES; TRACER DIFFUSION; CERAMICS; PEROVSKITE; IMPEDANCE; PB(ZRXTI1-X)O-3;
D O I
10.3390/ma9110945
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La3+ donor-doped, Fe3+ acceptor-doped and La3+/Fe3+-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.
引用
收藏
页数:22
相关论文
共 50 条
  • [21] Effect of Sr doping on electrical properties of lead zirconate titanate nanoceramics
    Kour, P.
    Pradhan, S. K.
    Kumar, Pawan
    Sinha, S. K.
    Kar, Manoranjan
    FERROELECTRICS, 2017, 517 (01) : 104 - 112
  • [22] Sonochemical preparation of net-lead zirconate titanate (PZT)
    Wang, JZ
    Hu, Y
    Zhang, R
    Song, L
    Chen, ZY
    JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 377 - 384
  • [23] Characterization of hydrothermally synthesized lead zirconate titanate (PZT) ceramics
    Wang, SF
    Wang, YR
    Mahalingam, T
    Chu, JP
    Lin, KU
    MATERIALS CHEMISTRY AND PHYSICS, 2004, 87 (01) : 53 - 58
  • [24] Lead zirconate titanate (PZT) films deposited by a hydrothermal method
    Euphrasie, S
    Daviero-Minaud, S
    Pernod, P
    SOLID STATE SCIENCES, 2003, 5 (11-12) : 1499 - 1504
  • [25] Enthalpies of formation of lead zirconate titanate (PZT) solid solutions
    Rane, MV
    Navrotsky, A
    Rossetti, GA
    JOURNAL OF SOLID STATE CHEMISTRY, 2001, 161 (02) : 402 - 409
  • [26] Hydrothermal and electrophoretic deposition of lead zirconate titanate (PZT) films
    Su, B
    Ponton, CB
    Button, TW
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) : 1539 - 1542
  • [27] Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles
    Paik, Young Hun
    Kojori, Hossein Shokri
    Kim, Sung Jin
    NANOTECHNOLOGY, 2016, 27 (07)
  • [28] Structural Origin of the Ferroelectric Fatigue in Lead Zirconate Titanate (PZT)
    Rouquette, J.
    Hinterstein, M.
    Haines, J.
    Papet, Ph.
    Knap, M.
    Glaum, J.
    Fuess, H.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2012, 68 : S94 - S94
  • [29] Solder Transfer of Lead Zirconate Titanate (PZT) Thin Films
    Dou, Guangbin
    Wright, Robert
    Holmes, Andrew
    Yeatman, Eric
    Kirby, Paul
    Zhang, Qi
    2010 11TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP), 2010, : 108 - 111
  • [30] Lead zirconate titanate (PZT) film capacitor with a multilayer construction
    Tsao, BH
    Carr, SF
    Weimer, JA
    PROCEEDINGS OF THE IEEE 1998 NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE, 1998, : 263 - 270