Plasma annealing as an effective method for the crystallization of Bismuth Iron Garnet films

被引：0
|
作者：
Sharda, R. [1 ]
Jeffery, R. D. [3 ]
Martyniuk, M. [1 ]
Woodward, R. C. [2 ]
Dell, J. M. [1 ]
Faraone, L. [1 ]
机构：
[1] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia
[2] Univ Western Australia, Sch Phys, Crawley, WA 6009, Australia
[3] Panaroma Synergy Ltd, Balcatta, Australia
来源：
2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012) | 2012年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Oxygen plasma annealing was used to crystallise (BiDy)(3)(FeGa)(5)O-12 (Bi:DyIG) at a temperature of 515 degrees C, which is over 100 degrees C lower compared with conventional thermal annealing. We used a thermal imager to measure and characterise the temperature of the sample with respect to RF power and pressure inside a plasma chamber.
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页码：183 / +
页数：2
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