Asymmetrical diffusion at interfaces of Mg/SiC multilayers

被引:19
|
作者
Li, Haochuan [1 ]
Zhu, Jingtao [1 ]
Wang, Zhanshan [1 ]
Song, Zhuqing [1 ]
Chen, Hong [1 ]
机构
[1] Tongji Univ, Sch Phys Sci & Engn, MOE Key Lab Adv Microstruct Mat, Inst Precis Opt Engn, Shanghai 200092, Peoples R China
来源
OPTICAL MATERIALS EXPRESS | 2013年 / 3卷 / 05期
基金
中国国家自然科学基金;
关键词
THERMAL-STABILITY; NM WAVELENGTH; PERFORMANCE; DEPOSITION; TRANSITION; REGION; VAPOR; MO;
D O I
10.1364/OME.3.000546
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interfacial structure of Mg/SiC multilayers as extreme ultra-violet reflectors was studied along with Mg/Si and Mg/C multilayers by means of x-ray reflectometry, x-ray diffraction, x-ray photoemission spectroscopy, and transmission electron microscopy. The interfacial diffusion in the Mg/SiC multilayer is found asymmetrical as the interlayers formed at SiC-on-Mg interfaces (2.5 nm) are much thicker than those at Mg-on-SiC interfaces (1.0 nm). Contrary asymmetry is found in the Mg/Si and Mg/C multilayers. An explanation of this phenomenon is suggested based on the investigation results. Our findings may result in improved reflectance of Mg/SiC multilayers by inserting diffusion barriers at the more diffused interfaces. (C) 2013 Optical Society of America
引用
收藏
页码:546 / 555
页数:10
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