Fabrication and characterization of nitride-based blue light-emitting diodes on moth-eye patterned sapphire substrate (MPSS)

被引：0

作者：

Tsuchiya, T. ^{[1
]}

Umeda, S. ^{[1
]}

Sowa, M. ^{[1
]}

Kondo, T. ^{[2
]}

Kitano, T. ^{[2
]}

Mori, M. ^{[2
]}

Suzuki, A. ^{[2
]}

Naniwae, K. ^{[2
]}

Sekine, H. ^{[4
]}

Iwaya, M. ^{[1
]}

Takeuchi, T. ^{[1
]}

Kamiyama, S. ^{[1
]}

Akasaki, I. ^{[1
,3
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Tenpaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan

[2] EL SEED Corp, Nagoya, Aichi 464, Japan

[3] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 464, Japan

[4] DIC Corp, Tokyo 103, Japan

来源：

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVII | 2013年 / 8641卷

关键词：

PSS; Moth-eye; UV-nanoimprinting technique; dry etching; LEDs; LITHOGRAPHY;

D O I：

10.1117/12.2003527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication procedure of a moth-eye patterned sapphire substrate (MPSS), which can enhance the light extraction efficiency of nitride-based light emitting diodes (LEDs) has been examined. The optimization of surface morphology after the etching of the MPSS for high-quality GaN growth was also performed. Then, we fabricated MPSS samples with a fixed pitch of 460nm, and corn height ranging from 50 to 350nm. The light extraction efficiency of blue-LEDs grown on a series of MPSS was enhanced about 1.4 times compared with the devices grown on a flat sapphire substrate. We found that if corn height exceeds 150nm, the MPSS effect is sufficiently observed.

引用

页数：7

共 50 条

[21] Enhancement of outcoupling efficiency of organic light-emitting diodes using a planarized moth-eye structure on glass substrate
Kim, Jeong Ho
Do, Lee-Mi
Choi, Je-Hong
Park, Jaehoon
Lee, Heon
OPTICS LETTERS, 2013, 38 (19) : 3773 - 3775
[22] Nitride-based cascade near white light-emitting diodes
Chen, CH
Chang, SJ
Su, YK
Sheu, JK
Chen, JF
Kuo, CH
Lin, YC
IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (07) : 908 - 910
[23] The Effect of Electrode Layout on Nitride-Based Light-Emitting Diodes
Chiou, Yu-Zung
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (04) : 647 - 651
[24] III-V nitride-based light-emitting diodes
Nakamura, S
DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) : 496 - 500
[25] Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate
Chang Sheng Xia
Z. M. Simon Li
Yang Sheng
Li Wen Cheng
Optical and Quantum Electronics, 2015, 47 : 463 - 463
[26] Sapphire substrate-transferred nitride-based light-emitting diode fabricated by sapphire wet etching technique
Choi, Yong-Seok
Kim, Seong-Jin
SOLID-STATE ELECTRONICS, 2006, 50 (9-10) : 1522 - 1528
[27] Growth and characterization of GaN grown on moth-eye patterned sapphire substrates
Ishihara, Akihiro
Kawai, Ryousuke
Kitano, Thukasa
Suzuki, Atushi
Kondo, Toshiyuki
Iwaya, Motoaki
Amano, Hiroshi
Kamiyama, Satoshi
Akasaki, Isamu
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
[28] Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates
Wang, W. K.
Wuu, D. S.
Lin, S. H.
Huang, S. Y.
Wen, K. S.
Horng, R. H.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (2-3) : 714 - 718
[29] GaN-Based Light-Emitting Diodes With Air Gap Array and Patterned Sapphire Substrate
Lai, Wei-Chih
Yang, Ya-Yu
Chen, Ying-Hong
Sheu, Jinn-Kong
IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (17) : 1207 - 1209
[30] Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate
Sheu, Jinn-Kong
Tu, Shang-Ju
Yeh, Yu-Hsiang
Lee, Ming-Lun
Lai, Wei-Chih
APPLIED PHYSICS LETTERS, 2012, 101 (15)

← 1 2 3 4 5 →