Photoluminescence study of shallow acceptors in GaAs spherical quantum dots

被引：0
|
作者：
SilvaValencia, J [1 ]
ParedesGutierrez, H [1 ]
PorrasMontenegro, N [1 ]
机构：
[1] UNIV VALLE,DEPT FIS,CALI,COLOMBIA
来源：
JOURNAL OF LUMINESCENCE | 1997年 / 72-4卷
关键词：
photoluminescence; shallow; impurities; quantum-dot;
D O I：
10.1016/S0022-2313(96)00428-0
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The theoretical acceptor-related photoluminescence spectra in a spherical GaAs-(Ga,Al)As quantum dot have been calculated using the effective-mass approximation within a variational procedure considering an infinite-confinement model and a homogeneous distribution of impurities. The interaction between the impurities has been neglected. The main features found were two peaks associated with transitions involving impurities close to the center and at the edge of the quantum dot, which modify their intensities depending on the temperature, and the size of the dot.
引用
收藏
页码：403 / 405
页数：3
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