Floating-gate MOS Structures and Applications

被引：5
|
作者：
Sharma, Susheel [1 ]
Rajput, S. S. [2 ]
Jamuar, S. S. [3 ]
机构：
[1] Univ Jammu, Dept Phys & Elect, Jammu 180006, India
[2] ABV Indian Inst Informat Technol & Management, Gwalior, India
[3] Univ Putra Malaysia, Dept Elect & Elect Engn, Serdang, Malaysia
来源：
IETE TECHNICAL REVIEW | 2008年 / 25卷 / 06期
关键词：
Current mirror; floating-gate MOS transistor; low-voltage circuit;
D O I：
10.4103/0256-4602.45426
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Floating-gate MOS transistor (FGMOS) has proved to be suitable for low-voltage analog applications, owing to its threshold voltage programmability. This tutorial paper presents FGMOS based circuit structures and their applications in analog signal processing. The FGMOS based current mirror and its application as voltage controlled current source has been presented. The performance of these structures has been verified using PSpice simulations for 0.5 m CMOS technology at number0.75 V.
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页码：338 / 345
页数：8
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