P-N Diode Characteristic of Ion Implantation SiC by Plasma Treatment

被引：0
|
作者：
Hiraga, Yusaku [1 ]
Nakamura, Tohru [1 ]
Nishimura, Tomoaki [1 ]
Sugimoto, Takahiro [1 ]
Tajima, Taku [1 ]
机构：
[1] Hosei Univ, Res Ctr Micronano Technor, Koganei, Tokyo 1840003, Japan
来源：
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 30 | 2012年 / 30期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The impact of CF4 plasma treatment on the surface roughening of SiC has been investigated for Al ion implanted SiC(0001) which is implanted partially with the energy range from 170 to 260 keV at a dose of 1.3 x 10(13)/cm(2). The P ion implanted sample, which is processed by CF4 plasma, shows small surface roughness of average 1.254 nm after annealing at 1700 degrees C for 30 min, while the sample without CF4 plasma treatment shows the large surface roughness (average 5.465nm) and micro step structure. Then we produced p-n diode on the above-mentioned substrate. Reverse leak current is decreased by CF4 plasma which avoid electrical field concentration on the surface of p-n junction area. The break down voltage was improved -285V to -325V.
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页码：59 / 62
页数：4
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