Ultralong Silicon Grains Grown by Excimer Laser Crystallization

被引：7

作者：

Shimoto, Shigeyuki ^{[1
]}

Katou, Tomoya ^{[1
]}

Endo, Takahiko ^{[1
]}

Taniguchi, Yukio ^{[1
]}

Ohno, Takashi ^{[1
]}

Azuma, Kazufumi ^{[1
]}

Matsumura, Masakiyo ^{[1
]}

机构：

[1] Adv LCD Technol Dev Ctr Co Ltd ALTEDEC, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 10期

关键词：

polysilicon; LTPS; excimer laser annealing; lateral growth; phase modulator; thin-film transistor; system on glass;

D O I：

10.1143/JJAP.47.7793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The factors affecting the elongation of Si grains were investigated for the excimer-laser-induced lateral grain growth method. The length of Si grains was found to depend on the laser light intensity profile, the waveform of the laser light pulse, particularly at its tail region, and the sample structure. Grains as long as 25 mu m were successfully grown at room temperature using it combination of a V-shaped light intensity profile, a light pulse waveform with a long tail, and a stacked sample structure with a cap layer. Grains of 11 mu m in length were also grown in a capless sample. [DOI: 10.1143/JJAP.47.7793]

引用

页码：7793 / 7797

页数：5

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