Ultralong Silicon Grains Grown by Excimer Laser Crystallization

被引：7

作者：

Shimoto, Shigeyuki ^{[1
]}

Katou, Tomoya ^{[1
]}

Endo, Takahiko ^{[1
]}

Taniguchi, Yukio ^{[1
]}

Ohno, Takashi ^{[1
]}

Azuma, Kazufumi ^{[1
]}

Matsumura, Masakiyo ^{[1
]}

机构：

[1] Adv LCD Technol Dev Ctr Co Ltd ALTEDEC, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 10期

关键词：

polysilicon; LTPS; excimer laser annealing; lateral growth; phase modulator; thin-film transistor; system on glass;

D O I：

10.1143/JJAP.47.7793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The factors affecting the elongation of Si grains were investigated for the excimer-laser-induced lateral grain growth method. The length of Si grains was found to depend on the laser light intensity profile, the waveform of the laser light pulse, particularly at its tail region, and the sample structure. Grains as long as 25 mu m were successfully grown at room temperature using it combination of a V-shaped light intensity profile, a light pulse waveform with a long tail, and a stacked sample structure with a cap layer. Grains of 11 mu m in length were also grown in a capless sample. [DOI: 10.1143/JJAP.47.7793]

引用

页码：7793 / 7797

页数：5

共 50 条

[1] Ultralong silicon grains grown by excimer laser crystallization
Advanced LCD Technologies Development Center Co., Ltd. , 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
不详
Jpn. J. Appl. Phys., 10 PART 1 (7793-7797):
[2] Location control of crystal grains in excimer laser crystallization of silicon thin films
Kumomi, H
APPLIED PHYSICS LETTERS, 2003, 83 (03) : 434 - 436
[3] Crystallization of amorphous silicon using an excimer laser
Pribat, D
Legagneux, P
Plais, F
Petinot, F
Huet, O
Reita, C
ANNALES DE PHYSIQUE, 1997, 22 : 213 - 224
[4] KrF excimer laser crystallization of silicon thin films
Summers, SD
Reehal, HS
Hirst, GJ
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2000, 11 (07) : 557 - 563
[5] Excimer laser crystallization of amorphous silicon on metallic substrate
Delachat, F.
Antoni, F.
Slaoui, A.
Cayron, C.
Ducros, C.
Lerat, J. -F.
Emeraud, T.
Negru, R.
Huet, K.
Reydet, P. -L.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2013, 111 (03): : 807 - 812
[6] Large polycrystalline silicon grains prepared by excimer laser crystallization of sputtered amorphous silicon film with process temperature at 100°C
He, Ming
Ishihara, Ryoichi
Neihof, Ellen J. J.
van Andel, Yvonne
Schellevis, Hugo
Metselaar, Wim
Beenakker, Kees
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (3B): : 1245 - 1249
[7] KrF excimer laser crystallization of silicon thin films
S. D. Summers
H. S. Reehal
G. J. Hirst
Journal of Materials Science: Materials in Electronics, 2000, 11 : 557 - 563
[8] Excimer laser crystallization of amorphous silicon on metallic substrate
F. Delachat
F. Antoni
A. Slaoui
C. Cayron
C. Ducros
J.-F. Lerat
T. Emeraud
R. Negru
K. Huet
P.-L. Reydet
Applied Physics A, 2013, 111 : 807 - 812
[9] Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs
Kumomi, H
Wakiyama, H
Nakagawa, G
Makihira, K
Asano, T
AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 2004, 808 : 277 - 282
[10] Location control of super lateral growth grains in excimer laser crystallization of silicon thin films by microlight beam seeding
Yeh, Wenchang
Ke, Dunyuan
Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (33-36):

← 1 2 3 4 5 →