Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions

被引：17

作者：

Sahadevan, Ajeesh M. ^{[1
]}

Tiwari, Ravi K. ^{[2
]}

Kalon, Gopinadhan ^{[1
]}

Bhatia, Charanjit S. ^{[1
]}

Saeys, Mark ^{[2
]}

Yang, Hyunsoo ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 117576, Singapore

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期

关键词：

TOTAL-ENERGY CALCULATIONS; ROOM-TEMPERATURE; EFFICIENT METHOD; STM IMAGES; MAGNETORESISTANCE; CONDUCTANCE; SIMULATION;

D O I：

10.1063/1.4738787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the effect of strain on magnetic tunnel junctions induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function quantum transport calculations show that the application of biaxial strain increases the conductance for both the parallel and anti-parallel configurations. However, the conductance for the minority channel and for the anti-parallel configuration is significantly more sensitive to strain, which drastically increases transmission through a MgO tunnel barrier, therefore, the TMR ratio decreases with biaxial strain. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738787]

引用

页数：5

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