Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions

被引：17
|
作者：
Sahadevan, Ajeesh M. [1 ]
Tiwari, Ravi K. [2 ]
Kalon, Gopinadhan [1 ]
Bhatia, Charanjit S. [1 ]
Saeys, Mark [2 ]
Yang, Hyunsoo [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 117576, Singapore
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期
关键词：
TOTAL-ENERGY CALCULATIONS; ROOM-TEMPERATURE; EFFICIENT METHOD; STM IMAGES; MAGNETORESISTANCE; CONDUCTANCE; SIMULATION;
D O I：
10.1063/1.4738787
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the effect of strain on magnetic tunnel junctions induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function quantum transport calculations show that the application of biaxial strain increases the conductance for both the parallel and anti-parallel configurations. However, the conductance for the minority channel and for the anti-parallel configuration is significantly more sensitive to strain, which drastically increases transmission through a MgO tunnel barrier, therefore, the TMR ratio decreases with biaxial strain. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738787]
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页数：5
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