Characterization of phosphorus-doped and boron-doped diamond-like carbon emitter arrays

被引：19

作者：

Tsai, CL ^{[1
]}

Chen, CF ^{[1
]}

Lin, CL ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 09期

关键词：

D O I：

10.1063/1.1408587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We synthesized phosphorus-doped and boron-doped emitters by using trimethylphosphite P(OCH3)(3) and trimethylborate B(OCH3)(3) as doping sources in a microwave plasma chemical vapor deposition system. Based on our experimental results from scanning electron microscopy and Raman spectra, there is much difference among undoped, phosphorus-doped, and boron-doped diamondlike material. In addition, doping both phosphorus and boron can enhance electric properties by reducing the turn-on voltage and can increase the emission current density. The turn-on voltages of undoped, boron-doped, and phosphorus-doped emitters in triode-type field emitter arrays are 15, 8, and 5 V, respectively. The emission currents of boron-doped and phosphorus-doped emitters are about 20 and 80 times larger than the undoped. (C) 2001 American Institute of Physics.

引用

页码：4847 / 4851

页数：5

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