Characteristics of XeCl excimer-laser annealed insulator

被引：0
|
作者：
Jang, KH
Choi, HS
Jun, JH
Yoo, JS
Han, MK
机构：
来源：
FLAT PANEL DISPLAY MATERIALS II | 1997年 / 424卷
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (Al/TEOS/n+ Silicon) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased upto the 170 mJ/cm(2) with increasing laser energy density and decreased at 220 mJ/cm(2). It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.
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页码：115 / 118
页数：4
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