Multiferroic characteristics of the strained epitaxial Bi0.9Ho0.1FeO3 thin film

被引：3
|
作者：
Park, C. S. [1 ]
Shon, Y. [2 ]
Yoon, I. T. [2 ]
Son, J. Y. [3 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea
[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[3] Kyung Hee Univ, Coll Appl Sci, Dept Appl Phys, Suwon 446701, South Korea
来源：
CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 02期
关键词：
Multiferroic; Ferroelectric; BiFeO3; CHARGE-LIMITED CURRENTS; BIFEO3; POLARIZATION;
D O I：
10.1016/j.cap.2012.08.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We fabricated high quality epitaxial Bi0.9Ho0.1FeO3 thin films which exhibited the tetragonally stained structure with a c/a ratio of about 1.04. The Bi0.9Ho0.1FeO3 thin film showed a good ferroelectric property with the high remanent polarization (P-r) of about 80 mu C/cm(2). The ferromagnetic hysteresis loop with a clear remanent magnetization was shown. The coercive field and the remanent magnetization of the Bi0.9Ho0.1FeO3 film are 6200 Oe and 1.7 emu/g, respectively. The abrupt conduction due to space charge limited (SCL) was revealed in leakage current density versus electric field. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：386 / 389
页数：4
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