Thermoelectric transport properties of polycrystalline SnSe alloyed with PbSe

被引:55
|
作者
Wei, Tian-Ran [1 ]
Tan, Gangjian [2 ]
Wu, Chao-Feng [1 ]
Chang, Cheng [3 ]
Zhao, Li-Dong [3 ]
Li, Jing-Feng [1 ,4 ]
Snyder, G. Jeffrey
Kanatzidis, Mercouri G. [2 ]
机构
[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[2] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
[3] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[4] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
关键词
N-TYPE SNSE; THERMAL-CONDUCTIVITY; ELECTRONIC-STRUCTURE; PHASE-TRANSITION; PERFORMANCE; SCATTERING; FIGURE; MERIT; TIN;
D O I
10.1063/1.4975603
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-crystal SnSe has been found to exhibit exceptional thermoelectric performance, but the efficiency of polycrystalline samples is still far from satisfactory. In this work, with an intention to effectively suppress heat conduction and minimally affect hole transport, we alloyed p-type polycrystalline SnSe with PbSe. Single-phase Sn1-xPbxSe solid solutions were formed up to x approximate to 0.12. The lattice thermal conductivity was reduced from 1.4 to 0.85W m(-1) K-1 by 12 at. % PbSe alloying due to strain and mass fluctuations. Interestingly, the Seebeck coefficient and carrier concentration were nearly unchanged by Pb substitution, indicating a constant effective mass and an undisrupted valence band maximum. A peak figure of merit (ZT) of 0.85 at 800K was obtained in the x = 0 sample, and relatively high performance was also achieved in solid solutions. A concise model was developed involving multiple carrier scattering mechanisms, capturing the dependence of the mobility on composition and temperature. Published by AIP Publishing.
引用
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页数:5
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