Molecular dynamic simulation of the atomic structure of aluminum solid-liquid interfaces

被引:10
|
作者
Men, H. [1 ]
Fan, Z. [1 ]
机构
[1] Brunel Univ, BCAST, EPSRC Ctr, LiME, Uxbridge UB8 3PH, Middx, England
来源
MATERIALS RESEARCH EXPRESS | 2014年 / 1卷 / 02期
基金
英国工程与自然科学研究理事会;
关键词
MD simulations; interface; atomic ordering; anisotropy;
D O I
10.1088/2053-1591/1/2/025705
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, molecular dynamic (MD) simulation was used to investigate the equilibrium atomic arrangement at aluminum solid-liquid (S/L) interfaces with {111}, {110} and {100} orientations. The simulation results reveal that the aluminum S/L interfaces are diffuse for all the orientations, and extend up to 7 atomic layers. Within the diffuse interfaces there exists substantial atomic ordering, which is manifested by atomic layering perpendicular to the interface and in-plane atomic ordering parallel to the interface. Atomic layering can be quantified by the atomic density profile (rho(z)) while the in-plane atomic ordering can be described by the in-plane ordering parameter (S(z)). The detailed MD simulation suggests that atomic layering at the interface always occurs within 7 atomic layers independent of the interface orientation while the in-plane ordering is highly dependent on the interface orientations, with the {111} interface being less diffuse than the {100} and {110} interfaces. This study demonstrates clearly that the physical origin of the diffuse interface is atomic layering and in-plane atomic ordering at the S/L interfaces. It is suggested that the difference in atomic layering and in-plane ordering at the S/L interface with different orientations is responsible for the observed growth anisotropy.
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页数:13
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