Low-noise amplifiers - Then and now

被引：9

作者：

Whelehan, JJ ^{[1
]}

机构：

[1] JJW Consulting Inc, Hatfield, PA 19440 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2002年 / 50卷 / 03期

关键词：

cryogenics; FETs; masers; parametric amplifiers; transistors;

D O I：

10.1109/22.989964

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The evolution in the performance of low-noise amplifiers (LNAs) has been dynamic over the past years. From the early LNAs that were complex, large, and heavy, to the present day InP high electron-mobility transistors that have virtually transformed the industry by their performance and extension into frequency bands that were not even considered in the past. This paper will hopefully summarize the transformation that has occurred in the LNA field, viewing where they were in the past, and where they are now.

引用

页码：806 / 813

页数：8

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