Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon

被引：6
|
作者：
Lv, Chunyan [1 ,2 ,3 ]
Zhu, Chen [1 ,2 ]
Wang, Canxing [1 ,2 ]
Li, Dongsheng [1 ,2 ]
Ma, Xiangyang [1 ,2 ]
Yang, Deren [1 ,2 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[3] Huzhou Univ, Sch Engn, Huzhou 313000, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 99卷
基金：
中国国家自然科学基金;
关键词：
Oxygen-vacancy-related states; Zirconium dioxide; Metal-oxide-semiconductor devices; Electroluminescence; CHEMICAL-VAPOR-DEPOSITION; PHOTOLUMINESCENCE PROPERTIES; THIN-FILMS; WHITE-LIGHT; ZIRCONIA; SI; NANOCRYSTALS; LUMINESCENCE; NANOPOWDERS; UV;
D O I：
10.1016/j.spmi.2016.03.007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Defect-related electroluminescence (EL) from ZrO2 films annealed under different atmosphere has been realized by means of electrical pumping scheme of metal-oxide semiconductor (MOS) devices. At the same injection current, the acquired EL from the MOS device with the vacuum-annealed ZrO2 film is much stronger than that from the counterpart with the oxygen-annealed ZrO2 film. This is because the vacuum-annealed ZrO2 film contains more oxygen vacancies and Zr3+ ions. Analysis on the current-voltage characteristic of the ZrO2-based MOS devices indicates the P-F conduction mechanism dominates the electron transportation at the EL-enabling voltages under forward bias. It is tentatively proposed that the recombination of the electrons trapped in multiple oxygen vacancy-related states with the holes in the defect level pertaining to Zr3+ ions brings about the EL emissions. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：186 / 191
页数：6
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