Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon

被引：6

作者：

Lv, Chunyan ^{[1
,2
,3
]}

Zhu, Chen ^{[1
,2
]}

Wang, Canxing ^{[1
,2
]}

Li, Dongsheng ^{[1
,2
]}

Ma, Xiangyang ^{[1
,2
]}

Yang, Deren ^{[1
,2
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

[3] Huzhou Univ, Sch Engn, Huzhou 313000, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 99卷

基金：

中国国家自然科学基金;

关键词：

Oxygen-vacancy-related states; Zirconium dioxide; Metal-oxide-semiconductor devices; Electroluminescence; CHEMICAL-VAPOR-DEPOSITION; PHOTOLUMINESCENCE PROPERTIES; THIN-FILMS; WHITE-LIGHT; ZIRCONIA; SI; NANOCRYSTALS; LUMINESCENCE; NANOPOWDERS; UV;

D O I：

10.1016/j.spmi.2016.03.007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Defect-related electroluminescence (EL) from ZrO2 films annealed under different atmosphere has been realized by means of electrical pumping scheme of metal-oxide semiconductor (MOS) devices. At the same injection current, the acquired EL from the MOS device with the vacuum-annealed ZrO2 film is much stronger than that from the counterpart with the oxygen-annealed ZrO2 film. This is because the vacuum-annealed ZrO2 film contains more oxygen vacancies and Zr3+ ions. Analysis on the current-voltage characteristic of the ZrO2-based MOS devices indicates the P-F conduction mechanism dominates the electron transportation at the EL-enabling voltages under forward bias. It is tentatively proposed that the recombination of the electrons trapped in multiple oxygen vacancy-related states with the holes in the defect level pertaining to Zr3+ ions brings about the EL emissions. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：186 / 191

页数：6

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