Pressure-induced superconductivity in tin sulfide

被引:34
|
作者
Matsumoto, Ryo [1 ,2 ]
Song, Peng [1 ,2 ]
Adachi, Shintaro [1 ]
Saito, Yoshito [1 ,2 ]
Hara, Hiroshi [1 ,2 ]
Yamashita, Aichi [1 ,2 ]
Nakamura, Kazuki [3 ]
Yamamoto, Sayaka [1 ,2 ,3 ]
Tanaka, Hiromi [3 ]
Irifune, Tetsuo [4 ]
Takeya, Hiroyuki [1 ]
Takano, Yoshihiko [1 ,2 ]
机构
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
[2] Univ Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058577, Japan
[3] Yonago Coll, Natl Inst Technol, 4448 Hikona, Yonago, Tottori 6838502, Japan
[4] Ehime Univ, Geodynam Res Ctr, Matsuyama, Ehime 7908577, Japan
关键词
THERMOELECTRIC PERFORMANCE; THERMAL-CONDUCTIVITY; SNS; TRANSITION; PHASE; FILMS; SNTE;
D O I
10.1103/PhysRevB.99.184502
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tin sulfide (SnS) single crystals were synthesized using a melt and slow-cooling method. The obtained crystals were characterized by x-ray diffraction, energy-dispersive spectrometry, and by x-ray photoelectron spectroscopy. Electrical transport properties of SnS were investigated under high pressure using a diamond anvil cell with boron-doped metallic diamond electrodes and an undoped diamond insulating layer. We successfully observed an insulator to metal transition between 8.1 and 12.5 GPa and pressure-induced superconductivity with a transition temperature (T-c) of 5.8 K under 47.8 GPa as predicted by theoretical calculations. Comparing with the pressure-induced superconductivity in related SnSe compound, a possible T-c enhancement in SnS by an increase of density of states at the Fermi level is expected.
引用
收藏
页数:6
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