Reliability of vertical-cavity lasers at Hewlett Packard

被引:4
|
作者
Herrick, RW [1 ]
Lei, C [1 ]
Keever, MR [1 ]
Lim, SF [1 ]
Deng, H [1 ]
Dudley, JJ [1 ]
Bhagat, JK [1 ]
机构
[1] Hewlett Packard Corp, Fiber Opt Components Div, San Jose, CA 95131 USA
来源
VERTICAL-CAVITY SURFACE-EMITTING LASERS III | 1999年 / 3627卷
关键词
VCSEL; reliability; degradation; semiconductor laser; laser aging;
D O I
10.1117/12.347106
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Vertical-Cavity Surface-Emitting Lasers (VCSELs) have rapidly been adopted for use in data communications modules due largely to the improvement in reliability over that of competing compact disc (CD) lasers. While very long mean lifetimes for VCSELs have been published elsewhere (>5x10(6) h MTTF at 40C)[1,2], telecommunications switching applications require further reduction in the early failure rate to meet targets of <0.5% failures over 25 years at 50-70C. Therefore, an extensive reliability program is needed to measure both the wear-out lifetime and the random failure rate of the devices. The results of accelerated life tests will be presented, and we will discuss the methodology used to estimate the failure rate. Models of current and thermal acceleration will be presented. Degradation mechanisms observed in HP lasers will be briefly discussed. We also present preliminary results from HP oxide-aperture VCSELs.
引用
收藏
页码:48 / 55
页数:8
相关论文
共 50 条
  • [41] Temperature characteristics of vertical-cavity surface-emitting lasers
    Li, L
    Zhong, JC
    Zhao, YJ
    SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES, 2005, 5624 : 72 - 77
  • [42] 650-nm vertical-cavity surface-emitting lasers:: Laser properties and reliability investigations
    Knigge, A
    Franke, R
    Knigge, S
    Sumpf, B
    Vogel, K
    Zorn, M
    Weyers, M
    Tränkle, G
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (10) : 1385 - 1387
  • [43] Polarization selection in external cavity birefringent vertical-cavity surface emitting lasers
    Valle, A
    Pesquera, L
    Dellunde, J
    Shore, KA
    VERTICAL-CAVITY SURFACE-EMITTING LASERS II, 1998, 3286 : 182 - 192
  • [44] Polarization bistability in vertical-cavity surface-emitting lasers
    Kawaguchi, H
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V, 1997, 2994 : 230 - 241
  • [45] Physics and simulation of vertical-cavity surface-emitting lasers
    Integrated Systems Laboratory, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland
    不详
    J. Comput. Theor. Nanosci., 2008, 6 (1058-1071):
  • [46] PHYSICS OF SEMICONDUCTOR VERTICAL-CAVITY SURFACE-EMITTING LASERS
    JIN, R
    KHITROVA, G
    BOGGAVARAPU, D
    GIBBS, HM
    KOCH, SW
    TOBIN, MS
    LEAVITT, RP
    JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS, 1995, 4 (01) : 141 - 161
  • [47] Nonlinear dynamics of vertical-cavity surface-emitting lasers
    Yu, SF
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (03) : 332 - 341
  • [48] GAIN-DEPENDENT POLARIZATION PROPERTIES OF VERTICAL-CAVITY LASERS
    CHOQUETTE, KD
    SCHNEIDER, RP
    LEAR, KL
    LEIBENGUTH, RE
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 661 - 666
  • [49] Selective oxidation of buried AlGaAs for fabrication of vertical-cavity lasers
    Choquette, KD
    Geib, KM
    Chui, HC
    Hou, HQ
    Hull, R
    COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS, 1996, 421 : 53 - 61
  • [50] Prospects for nitride vertical-cavity surface-emitting lasers
    Mackowiak, P
    Nakwaski, W
    OPTICS IN COMPUTING 98, 1998, 3490 : 331 - 334