Analysis of electronic structure of amorphous InGaZnO/SiO2 interface by angle-resolved X-ray photoelectron spectroscopy

被引：19

作者：

Ueoka, Y. ^{[1
]}

Ishikawa, Y. ^{[1
]}

Maejima, N. ^{[1
]}

Matsui, F. ^{[1
]}

Matsui, H. ^{[1
]}

Yamazaki, H. ^{[1
]}

Urakawa, S. ^{[1
]}

Horita, M. ^{[1
]}

Daimon, H. ^{[1
]}

Uraoka, Y. ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 16期

关键词：

D O I：

10.1063/1.4828869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structures of amorphous indium gallium zinc oxide (a-IGZO) on a SiO2 layers before and after annealing were observed by constant final state X-ray photoelectron spectroscopy (CFS-XPS) and X-ray adsorption near-edge structure spectroscopy (XANES). From the results of angle-resolved CFS-XPS, the change in the electronic state was clearly observed in the a-IGZO bulk rather than in the a-IGZO/SiO2 interface. This suggests that the electronic structures of the a-IGZO bulk strongly affected the thin-film transistor characteristics. The results of XANES indicated an increase in the number of tail states upon atmospheric annealing (AT). We consider that the increase in the number of tail states decreased the channel mobility of AT samples. (C) 2013 AIP Publishing LLC.

引用

页数：6

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