Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH3

被引：21

作者：

Kim, SH ^{[1
]}

Kim, JK

Kwak, N

Sohn, H

Kim, J

Jung, SH

Hong, MR

Lee, SH

Collins, J

机构：

[1] Hynix Semicond, Res & Dev Div, Kyonggi Do 467701, South Korea

[2] Novellus Syst Korea, Kyonggi Do 463020, South Korea

[3] Novellus Syst Inc, San Jose, CA 96134 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 03期

关键词：

D O I：

10.1149/1.2161451

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2H6, WF6, and NH3 at 300 S C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was similar to 0.28 nm/cycle with B2H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of similar to 350 mu Omega cm with a metallic W-N bond and density of similar to 15 g/cm(3) at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with beta-W2N and delta-WN phase. Step coverage was approximately 100% even on the 0.14 mu m diameter contact hole with a 16:1 aspect ratio. (c) 2006 The Electrochemical Society.

引用

页码：C54 / C57

页数：4