Sulfide passivation of a textured interface of a gallium arsenide surface-barrier photovoltaic cell

被引：4
|
作者：
Dmitruk, NL [1 ]
Borkovskaya, OY [1 ]
Mamontova, IB [1 ]
机构：
[1] Ukrainian Acad Sci, Inst Semicond Phys, UA-252650 Kiev, Ukraine
来源：
TECHNICAL PHYSICS | 1999年 / 44卷 / 06期
关键词：
D O I：
10.1134/1.1259454
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A comparative study is made of the influence of sulfide passivation in an aqueous Na2S . 9H(2)O solution on the photoconversion parameters of solar radiation in Au-GaAs barrier structures as a function of the character of the microrelief and the pretreatment of the GaAs surface. A quasigrating and a dendritic surface microrelief were produced by anisotropic chemical etching. It is shown that this type of GaAs surface treatment is potentially useful for enhancing the efficiency of a photovoltaic cell stored for several years. A possible mechanism is discussed for the processes leading to changes in the structure parameters. (C) 1999 American Institute of Physics. [S1063-7842(99)02806-8].
引用
收藏
页码：726 / 728
页数：3
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