Investigation on the formation mechanism of p-type ZnO:In-N thin films: experiment and theory

被引：8

作者：

Qin, G. P. ^{[1
]}

Zhang, H. ^{[2
]}

Li, W. J. ^{[1
]}

Ruan, H. B. ^{[3
]}

Wang, J. ^{[1
]}

Wang, D. ^{[1
]}

Fang, L. ^{[2
]}

Kong, C. Y. ^{[1
]}

机构：

[1] Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing 401331, Peoples R China

[2] Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China

[3] Chongqing Univ Arts & Sci, Res Ctr Mat Interdisciplinary Sci, Chongqing 402160, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 06期

基金：

中国国家自然科学基金;

关键词：

NITROGEN; ENERGY;

D O I：

10.1007/s10854-019-00906-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of post-annealing on electrical properties of N+ ion-implanted into indium doped ZnO (ZnO:In-N) films are investigated. p-type conduction of ZnO:In-N films with the appropriate annealing have been confirmed by Hall-effect measurements and electrical rectification behavior of homojunctions. The transmitted spectra and temperature-dependent photoluminescence (PL) spectroscopy results show that the band gap of p-type ZnO:In-N is narrow as compared to ZnO:In and the ionization acceptor energy is estimated to be 128meV, which agrees well with our calculated transition levels epsilon mml:mfenced close= open=0/-1 mml:mfenced of In-Zn-2N(O). X-ray photoelectron spectroscopy (XPS) spectra confirm the dominant existence of N-related acceptor defect complexes in p-type samples. Combining with transition state calculations, we find that the incorporation of In can facilitate p-type effective doping by pinning a passive impurity band above the valence band maximum (VBM) and decreasing thermal activation energy of N interstitial (N-i) in ZnO.

引用

页码：6059 / 6064

页数：6

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