Electric-field-induced optical second-harmonic generation in poly(phenylene vinylene) light-emitting diodes

被引：4
|
作者：
Hildebrandt, R
Keller, HM
Marowsky, G
Brütting, W
Fehn, T
Schwoerer, M
Sipe, JE
机构：
[1] Laser Lab Gottingen eV, D-37077 Gottingen, Germany
[2] Lehrstuhl Expt Phys 2, D-95440 Bayreuth, Germany
[3] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
来源：
CHEMICAL PHYSICS | 1999年 / 245卷 / 1-3期
关键词：
D O I：
10.1016/S0301-0104(99)00118-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrate second-harmonic generation in polymeric light-emitting diodes built in a layer structure of indium tin oxide, poly(phenylene vinylene) and aluminum. The second-harmonic intensity generated in the active zone of the diode depends quadratically on the applied reverse bias. In order to account for the bias dependence of the measured intensity a simple model is given in that the signal consists of two contributions: a constant, bias-independent contribution from the indium tin oxide/poly(phenylene vinylene) interface and a second one that depends on the effective bias at the organic metal-semiconductor contact. Further applications for second-harmonic generation in organic semiconductors are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：341 / 344
页数：4
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