Phonon-induced photoconductive response in doped semiconductors

被引：12
|
作者：
Jin, KJ
Zhang, JD
Chen, ZH
Yang, GZ
Chen, ZH
Shi, XH
Shen, SC
机构：
[1] Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Florida Int Univ, Dept Phys, Miami, FL 33199 USA
[4] Chinese Acad Sci, Inst Tech Phys, Natl Lab Infrared Phys Shanghai, Shanghai 200083, Peoples R China
[5] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
来源：
PHYSICAL REVIEW B | 2001年 / 64卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.64.205203
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present an unusual photoconductive response in doped GaAs and InP semiconductor epitaxial layers and demonstrate that such a response is due to the longitudinal optic (LO) phonon-induced Fano resonance instead of the traditional kinetic mechanism. Theoretical calculations based upon the present mechanism are in excellent agreement with the experimental results and the developed formalism should be universally applicable to the related photoconductive processes of other doped semiconductors.
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页数：4
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