Reactive Ion Etch of Si3N4 Spacers High Selective to Germanium

被引：0
|
作者：
Altamirano, Efrain [1 ]
Kunnen, Eddy [1 ]
De Jaeger, Brice [1 ]
Boullart, Werner [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期
关键词：
D O I：
10.1149/1.2986761
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The plasma etching of Si(3)N(4) spacers selective to germanium With less than one nanometer recess in a CH(3)F/CF(4)/O(2) mixture has been studied. The X-Ray Photoelectron Spectroscopy, Angle Resolved X-ray Photoelectron Spectroscopy, Transmission Electron Microscopy, Ellipsometry and Mass Metrology analyses suggest that the oxidation of the germanium top layers is the key parameter to achieve a high selectivity during the Si(3)N(4) spacer patterning.
引用
收藏
页码：147 / 152
页数：6
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