Reactive Ion Etch of Si3N4 Spacers High Selective to Germanium

被引：0
|
作者：
Altamirano, Efrain [1 ]
Kunnen, Eddy [1 ]
De Jaeger, Brice [1 ]
Boullart, Werner [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期
关键词：
D O I：
10.1149/1.2986761
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The plasma etching of Si(3)N(4) spacers selective to germanium With less than one nanometer recess in a CH(3)F/CF(4)/O(2) mixture has been studied. The X-Ray Photoelectron Spectroscopy, Angle Resolved X-ray Photoelectron Spectroscopy, Transmission Electron Microscopy, Ellipsometry and Mass Metrology analyses suggest that the oxidation of the germanium top layers is the key parameter to achieve a high selectivity during the Si(3)N(4) spacer patterning.
引用
收藏
页码：147 / 152
页数：6
相关论文
共 50 条
  • [1] A method for high selective etch of Si3N4 and SiC with ion modification and chemical removal
    Kumakura, Sho
    Tabata, Masahiro
    Honda, Masanobu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SE)
  • [2] Selective Si3N4 etch in single wafer application
    Knotter, DM
    Stewart, N
    Sharp, I
    ULTRA CLEAN PROCESSING OF SILICON SURFACES VII, 2005, 103-104 : 103 - 106
  • [3] ETCH RATE MODIFICATION OF SI3N4 LAYERS BY ION-BOMBARDMENT AND ANNEALING
    VANOMMEN, AH
    WILLEMSEN, MFC
    KUIPER, AET
    HABRAKEN, FHPM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (10) : 2140 - 2147
  • [4] ETCH RATE MODIFICATION OF Si3N4 LAYERS BY ION BOMBARDMENT AND ANNEALING.
    Van Ommen, A.H.
    Willemsen, M.F.C.
    Kuiper, A.E.T.
    Habraken, F.H.P.M.
    1600, (133):
  • [5] Role of polymer formation in SI3N4 etch profile
    Ye, JH
    Lee, PC
    Zhou, MS
    PLASMA PROCESSING XII, 1998, 98 (04): : 189 - 196
  • [6] Controlled gradual and local thinning of free-standing nanometer thick Si3N4 films using reactive ion etch
    Fatma Dogan Guzel
    William H. Pitchford
    Jaspreet Kaur
    Microsystem Technologies, 2020, 26 : 1167 - 1172
  • [7] Controlled gradual and local thinning of free-standing nanometer thick Si3N4 films using reactive ion etch
    Guzel, Fatma Dogan
    Pitchford, William H.
    Kaur, Jaspreet
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2020, 26 (04): : 1167 - 1172
  • [8] The Research on High Pressure Sintering of Mixed Powder γ-Si3N4 and α-Si3N4
    Yao, Huai
    Wang, Yongzhi
    Xu, Bo
    MATERIALS AND DESIGN, PTS 1-3, 2011, 284-286 : 1397 - 1400
  • [9] Angular dependence Of Si3N4 etch rates and the etch selectivity Of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma
    Lee, Jin-Kwan
    Lee, Gyeo-Re
    Min, Jae-Ho
    Moon, Sang Heup
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (05): : 1395 - 1401
  • [10] Performing selective etch of Si3N4 and SiO2 using a single-wafer wet-etch technology
    Knotter, M
    Stewart, N
    Sharp, I
    Scranton, D
    MICRO, 2005, 23 (01): : 47 - 52
12345