Vacuum Arc Deposition using Refractory Electrodes

被引:0
|
作者
Beilis, I. I. [1 ]
Koulik, Y. [1 ]
Yankelevich, E. [1 ]
Arbilly, D. [1 ]
Boxman, R. L. [1 ]
机构
[1] Tel Aviv Univ, Fac Engn, Sch Elect Engn, Elect Discharge & Plasma Lab, POB 39040, IL-69978 Tel Aviv, Israel
关键词
CONFIGURATION;
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Refractory metal plasma generated by a vacuum arc was used to deposit thin films. The deposition rate V-dep was measured for different electrode configurations: (1) a planar Zr cathode and a planar W anode-both 60mm diam, (2) 32 mm diam cylindrical W or Mo electrode pairs, and a (3) Nb cylindrical cathode (32 mm diam) closed by a BN plate and a 50 mm diam W shower-head cup anode with either (a) an array of 1 mm diameter exit holes or (b) one 4 mm diam hole Ta cup anode. For Zr films, V-dep was 0.8. mu m/min at a distance 110 mm from the electrode axis at 90 s after arc ignition. For W films at 60 s after ignition and the planar electrode configuration, V-dep was 0.6. mu m/min at a distance of 60 mm from the electrode axis. For Nb films deposited with the closed electrode configuration, V-dep was 0.3. mu m/min at distance 80 mm from the front shower anode surface at 30 s after arc ignition. For cylindrical Mo electrode pair V-dep was about 0.4. mu m/min at a distance of 110 mm, 70 s after 200 A arc ignition.
引用
收藏
页码:513 / 516
页数:4
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